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Kioxia and Sandisk have unveiled their next-generation 3D flash memory technology, achieving a groundbreaking 4.8Gb/s NAND interface speed. The innovation, presented at ISSCC 2025, incorporates Toggle DDR6.0 interface standards and leverages CBA (CMOS directly Bonded to Array) technology.
The new technology delivers a 33% improvement in NAND interface speed compared to their 8th generation products, while reducing power consumption by 10% for input and 34% for output. The 10th generation 3D flash memory features 332 memory layers and achieves a 59% improvement in bit density.
The companies are also developing their 9th generation 3D flash memory, focusing on delivering capital-efficient, high-performance, low-power products to meet growing AI and data center demands.
Kioxia e Sandisk hanno svelato la loro tecnologia di memoria flash 3D di nuova generazione, raggiungendo una velocità di interfaccia NAND rivoluzionaria di 4,8 Gb/s. L’innovazione, presentata all’ISSCC 2025, incorpora gli standard di interfaccia Toggle DDR6.0 e sfrutta la tecnologia CBA (CMOS direttamente legato all’Array).
La nuova tecnologia offre un 33% di miglioramento nella velocità di interfaccia NAND rispetto ai loro prodotti di ottava generazione, riducendo il consumo energetico del 10% per l’input e del 34% per l’output. La memoria flash 3D di decima generazione presenta 332 strati di memoria e raggiunge un 59% di miglioramento nella densità di bit.
Le aziende stanno anche sviluppando la loro memoria flash 3D di nona generazione, concentrandosi sulla fornitura di prodotti ad alta efficienza di capitale, ad alte prestazioni e a basso consumo energetico per soddisfare la crescente domanda di AI e centri dati.
Kioxia y Sandisk han presentado su tecnología de memoria flash 3D de próxima generación, logrando una velocidad de interfaz NAND revolucionaria de 4.8 Gb/s. La innovación, presentada en el ISSCC 2025, incorpora los estándares de interfaz Toggle DDR6.0 y aprovecha la tecnología CBA (CMOS directamente unido a la matriz).
La nueva tecnología ofrece una mejora del 33% en la velocidad de interfaz NAND en comparación con sus productos de octava generación, mientras reduce el consumo de energía en un 10% para la entrada y un 34% para la salida. La memoria flash 3D de décima generación cuenta con 332 capas de memoria y logra una mejora del 59% en la densidad de bits.
Las empresas también están desarrollando su memoria flash 3D de novena generación, centrándose en ofrecer productos de alto rendimiento, eficiente en capital y de bajo consumo para satisfacer la creciente demanda de IA y centros de datos.
키옥시아와 샌디스크는 차세대 3D 플래시 메모리 기술을 공개하며 혁신적인 4.8Gb/s NAND 인터페이스 속도를 달성했습니다. ISSCC 2025에서 발표된 이 혁신은 Toggle DDR6.0 인터페이스 표준을 통합하고 CBA(배열에 직접 결합된 CMOS) 기술을 활용합니다.
이 새로운 기술은 8세대 제품에 비해 NAND 인터페이스 속도를 33% 향상시키며, 입력 전력 소비를 10%, 출력 전력 소비를 34% 줄입니다. 10세대 3D 플래시 메모리는 332개의 메모리 레이어를 특징으로 하며 비트 밀도에서 59% 향상을 달성합니다.
이 회사들은 또한 증가하는 AI 및 데이터 센터 수요를 충족하기 위해 자본 효율적이고 고성능의 저전력 제품을 제공하는 데 중점을 두고 9세대 3D 플래시 메모리를 개발하고 있습니다.
Kioxia et Sandisk ont dévoilé leur technologie de mémoire flash 3D de nouvelle génération, atteignant une vitesse d’interface NAND révolutionnaire de 4,8 Gb/s. L’innovation, présentée à l’ISSCC 2025, intègre les normes d’interface Toggle DDR6.0 et exploite la technologie CBA (CMOS directement lié à l’Array).
La nouvelle technologie offre une amélioration de 33% de la vitesse de l’interface NAND par rapport à leurs produits de 8ème génération, tout en réduisant la consommation d’énergie de 10% pour l’entrée et de 34% pour la sortie. La mémoire flash 3D de 10ème génération présente 332 couches de mémoire et atteint une amélioration de 59% de la densité des bits.
Les entreprises développent également leur mémoire flash 3D de 9ème génération, en se concentrant sur la fourniture de produits à haute performance, à faible consommation d’énergie et efficaces en capital pour répondre à la demande croissante en IA et en centres de données.
Kioxia und Sandisk haben ihre nächste Generation der 3D-Flashspeichertechnologie vorgestellt und eine bahnbrechende 4,8 Gb/s NAND-Schnittstellengeschwindigkeit erreicht. Die Innovation, die auf der ISSCC 2025 präsentiert wurde, integriert die Standards der Toggle DDR6.0-Schnittstelle und nutzt die CBA-Technologie (CMOS direkt an das Array gebunden).
Die neue Technologie bietet eine 33%ige Verbesserung der NAND-Schnittstellengeschwindigkeit im Vergleich zu ihren Produkten der 8. Generation und reduziert den Stromverbrauch um 10% für den Eingang und 34% für den Ausgang. Der 10. Generation 3D-Flashspeicher verfügt über 332 Speicherebenen und erzielt eine 59%ige Verbesserung der Bitdichte.
Die Unternehmen entwickeln auch ihren 9. Generation 3D-Flashspeicher, wobei der Fokus darauf liegt, kapital effiziente, hochleistungsfähige und energiesparende Produkte anzubieten, um den wachsenden Anforderungen der KI und der Rechenzentren gerecht zu werden.
Positive
- 33% improvement in NAND interface speed to 4.8Gb/s
- Power consumption reduction: 10% for input, 34% for output
- 59% improvement in bit density with 332 memory layers
- Implementation of advanced CBA technology for better efficiency
Insights
This technological breakthrough represents a pivotal moment for Western Digital’s competitive position in the high-performance storage market. The achievement of 4.8Gb/s NAND interface speed with 10% and 34% power reductions for input/output operations directly addresses two critical challenges in the AI era: data throughput and energy efficiency.
The timing of this announcement is particularly strategic. As AI workloads drive unprecedented demand for high-speed storage solutions, WDC’s innovation in power-efficient, high-density storage technology positions them to capture a larger share of the rapidly expanding data center market. The 59% improvement in bit density through 332-layer technology will enable higher capacity storage solutions while optimizing manufacturing costs per bit.
The implementation of CBA (CMOS directly Bonded to Array) technology is especially significant from a manufacturing perspective. This approach allows for more efficient production by combining new CMOS technology with existing memory cell architecture, potentially leading to better margins and faster time-to-market for new products. The capital efficiency aspect is important given the intense investment requirements in the semiconductor industry.
Market implications extend beyond immediate technical advantages. The power efficiency improvements are particularly compelling for hyperscale data center operators, where energy costs represent a significant portion of operating expenses. The 34% reduction in output power consumption could translate into substantial cost savings at scale, making WDC’s solutions more attractive to enterprise customers.
This development also strengthens WDC’s position in the ongoing transition to PCIe Gen5 and future Gen6 SSDs, where interface speeds and power efficiency are critical differentiators. The technology’s ability to balance performance with power consumption addresses a key challenge in enterprise storage solutions, potentially leading to increased market share in high-margin enterprise segments.
Companies Preview 10th Generation 3D Flash Memory Technology Setting A New Benchmark for Performance, Power Efficiency and Bit Density
SAN FRANCISCO–(BUSINESS WIRE)– Kioxia Corporation and Sandisk Corporation have pioneered a state-of-the-art 3D flash memory technology, setting the industry benchmark with a 4.8Gb/s NAND interface speed, superior power efficiency, and heightened density.
Unveiled at ISSCC 2025, the new 3D flash memory innovation, together with the companies’ revolutionary CBA (CMOS directly Bonded to Array) technology1, incorporates one of the latest interface standards, Toggle DDR6.0 for NAND flash memory, and leverages the SCA (Separate Command Address) protocol2, a novel command address input method of its interface, and PI-LTT (Power Isolated Low-Tapped Termination) technology3, which is instrumental in further reducing power consumption.
Leveraging this unique high-speed technology, the companies expect the new 3D flash memory to achieve a 33 percent improvement in NAND interface speed compared with their 8th generation 3D flash memory currently in mass production, reaching a 4.8Gb/s interface speed. The technology can also deliver enhanced power efficiency of data input/output, reducing power consumption by 10 percent for input and 34 percent for output, thereby achieving a balance of high performance and low power consumption. Previewing the 10th generation 3D flash memory, the companies detailed that by increasing the number of memory layers to 332 and optimizing the floor plan for increased planar density, the technology improves bit density by 59 percent.
Hideshi Miyajima, Chief Technology Officer at Kioxia, said, “With the proliferation of AI technologies, the amount of data generated is projected to increase significantly and so is the need for increased power efficiency in the modern data center. Kioxia strongly believes that this new technology will enable larger capacity, higher speed, and lower power consumption products including SSDs for future storage solutions and lay the groundwork for development of AI.”
SVP of Global Strategy and Technology at Sandisk, Alper Ilkbahar, said, “As AI advances, customer needs for memory are becoming increasingly diverse. Through our CBA technology innovation, we aim to launch products that deliver the best mix in terms of capacity, speed, performance, and capital efficiency to cater to our customers across market segments.”
Kioxia and Sandisk also shared plans for the upcoming 9th generation 3D flash memory. Enabled by their unique CBA technology, the companies can combine the new CMOS technology with an existing memory cell technology to deliver capital-efficient, high-performance, low-power products. Both companies remain committed to developing cutting-edge flash memory technologies, offering tailored solutions to meet customer needs, and contributing to the advancement of the digital society.
About Kioxia
Kioxia is a world leader in memory solutions, dedicated to the development, production and sale of flash memory and solid-state drives (SSDs). In April 2017, its predecessor Toshiba Memory was spun off from Toshiba Corporation, the company that invented NAND flash memory in 1987. Kioxia is committed to uplifting the world with “memory” by offering products, services and systems that create choice for customers and memory-based value for society. Kioxia’s innovative 3D flash memory technology, BiCS FLASH™, is shaping the future of storage in high-density applications, including advanced smartphones, PCs, automotive systems, data centers and generative AI systems.
About Sandisk
Sandisk delivers innovative Flash solutions and advanced memory technologies that meet people and businesses at the intersection of their aspirations and the moment, enabling them to keep moving and pushing possibility forward. Sandisk Corporation is a wholly owned subsidiary of Western Digital (Nasdaq: WDC). Follow Sandisk on Instagram, Facebook, X, LinkedIn, Youtube. Join TeamSandisk on Instagram.
- Technology wherein each CMOS wafer and cell array wafer are manufactured separately in their optimized condition and then bonded together.
- Technology wherein the bus for Command/Address input and the bus for data transfer are completely separated into different buses and are used in parallel. This reduces data input/output time.
- Technology wherein power sources for existing 1.2V and additional lower voltage are utilized for the NAND interface power source. This reduces power consumption during data input/output.
* 1Gbps is calculated as 1,000,000,000bits/second. This value is obtained under specific our test environment, and may vary depending on use conditions.
* Company names, product names and service names may be trademarks of third-party companies.
Forward-Looking Statements
This press release contains forward-looking statements within the meaning of federal securities laws, including statements regarding expectations for the availability, capabilities and impacts of Sandisk’s technology and products. These forward-looking statements are based on management’s current expectations and are subject to risks and uncertainties that could cause actual results to differ materially from those expressed or implied in the forward-looking statements.
Key risks and uncertainties that could cause actual results to differ materially from those expressed or implied in the forward-looking statements include: operational, financial and legal challenges and difficulties inherent in implementing the spin-off of Western Digital Corporation’s Flash business to Sandisk; the future operating results of the stand-alone flash business; whether the spin-off will be completed on the expected terms and on the anticipated timeline or at all, including the possibility that the conditions to the spin-off may not be satisfied, including that a governmental entity may prohibit, delay or refuse to grant a necessary approval; the expected benefits and costs of the spin-off, including that the expected benefits will not be realized within the expected time frame, in full or at all; potential adverse reactions or changes to relationships with customers, suppliers or other partners resulting from the announcement and completion of the spin-off; competitive responses to the announcement or completion of the spin-off; unexpected costs, liabilities, charges or expenses resulting from the spin-off; litigation relating to the spin-off; the inability to retain key personnel as a result of the spin-off, disruption of management time from ongoing business operations due to the spin-off; business impact of geopolitical conflicts; and any changes in general economic and/or industry-specific conditions; other economic, competitive, legal, governmental, technological and other factors that may affect the spin-off and other risks and uncertainties set forth in the final information statement attached as Exhibit 99.1 to the Sandisk Corporation’s Form 10 Registration Statement filed with the SEC on January 27, 2025, which is available on the SEC’s website at www.sec.gov. You should not place undue reliance on these forward-looking statements, which speak only as of the date hereof, and Sandisk undertakes no obligation to update or revise these forward-looking statements to reflect new information or events, except as required by law.
View source version on businesswire.com: https://www.businesswire.com/news/home/20250219200872/en/
Company Contacts:
Kioxia
Sandisk
Investors: Investors@sandisk.com
Media: Mediainquiries@sandisk.com
Source: Kioxia Corporation
FAQ
What speed improvement does Kioxia and Sandisk’s new 3D flash memory technology achieve?
The new technology achieves a 4.8Gb/s NAND interface speed, representing a 33% improvement compared to their 8th generation 3D flash memory.
How many memory layers does the 10th generation 3D flash memory technology have?
The 10th generation 3D flash memory technology features 332 memory layers.
What power efficiency improvements does the new flash memory technology offer?
The technology reduces power consumption by 10% for input and 34% for output operations.
What is the bit density improvement in the new 3D flash memory technology?
The new technology improves bit density by 59% through increased memory layers and optimized floor plan.
What key technologies are used in this new flash memory innovation?
The innovation uses CBA (CMOS directly Bonded to Array) technology, Toggle DDR6.0 interface standards, SCA protocol, and PI-LTT technology.
