Boston, MA 12/18/2013 (wallstreetpr) – Micron Technology, Inc. (NASDAQ:MU), one of the leading providers of advanced semiconductor solutions of the world, announced yesterday that it is going to collaborate with Broadcom Corporation (NASDAQ:BRCM) to develop first solution of the industry. This solution is being designed for the customers that are challenged by intrinsic DDR3 timing parameter called four activate window or tFAW.
tFAW refers to a timing parameter of DDR3 that restricts the throughput of data in the storage, networking and server applications and can compromise the bandwidth by 15 to 35%. The access granularity is becoming double with every new DRAM generation and hence it is causing some tRDD and tFAW like timing parameters to restrict the throughput of data. Thus, high-performance applications are facing challenges because in a given tFAW period, no more than 4 bank activate commands can be issued.
Reason Of Required Efficiency
In the midst of continuous overload of data, the search for improved performance is a challenge among network providers. Architecture solutions will serve in boosting overall network performance and extend operational efficiencies by opening up bandwidth for high-performance applications. Global IP traffic is expected to grow at an annual growth rate of 23%, according to the Cisco® Visual Networking Index.
Service providers all around the world are trying to transform their networks in order to satisfy the increasing demand for bandwidth by adopting higher-bandwidth links.
Words Of Management
The vice president of DRAM marketing at Micron, Robert Feurle said that today, OEMs continue to tackle the problems of an ever-increasing variety, velocity and volume of data. He said that they are pleased to work with Broadcom to find a solution that can help in increasing the throughput for their customers.
Meanwhile, the senior director of product computing, marketing and connectivity of Broadcom, Dan Harding said that the company is dedicated to deliver the high-bandwidth capacity.